Accession Number:

ADA045091

Title:

Manufacturing Methods and Technology Engineering High Efficiency, High Power Gallium Arsenide Read-Type IMPATT Diodes.

Descriptive Note:

Quarterly progress rept. no. 7, 1 Jan-31 Mar 77,

Corporate Author:

RAYTHEON CO WALTHAM MASS SPECIAL MICROWAVE DEVICES

Personal Author(s):

Report Date:

1977-04-01

Pagination or Media Count:

47.0

Abstract:

Group B testing of the confirmatory sample diodes was completed during the period, ending that phase of the program. All devices tested met specifications. Data is included herein. The Read profile wafers for the pilot production diodes were fabricated and met specifications. They were delivered to the production line. Wafer characterization data is included herein, as well as evaluation data on the first two wafers subsequent to sample diode assembly on the production line. The fifth X-band life test was completed. The sixth X and Ku-band life tests were also completed. Results are discussed herein. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Fabrication Metallurgy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE