InSb MIS Development.
Final rept. Dec 76-Apr 77,
GENERAL ELECTRIC CO SYRACUSE N Y OPTOELECTRONIC SYSTEMS OPERATION
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Further improvement on both line and two-dimensional InSb CID arrays has been made. The sensitivity of line arrays has been improved by using thin-gate oxide and low-doping substrate materials, which reduce the input line capacitance. The co-planar two-dimensional array structure also has been further improved. Effort on a low-noise amplifier has been carried out and performance of the JFET preamplifier was much better than that of the MOSFET. The NETD for a line array was found to be 0.11 K using a JFET preamp and 0.5 K using a MOSFET. The measurement was made with a narrow spectral filter of 3.6 to 4.0 microns, f3.25 lens system, and a 500 microsec. integration time. Author
- Infrared Detection and Detectors
- Solid State Physics