Accession Number:

ADA043740

Title:

Current and C-V Instabilities in Si02 at High Fields

Descriptive Note:

Research rept.

Corporate Author:

IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Personal Author(s):

Report Date:

1977-03-02

Pagination or Media Count:

11.0

Abstract:

Results have been obtained concerning the interrelation of current and C-V instabilities in MOS capacitors subjected to negative gate high field pulsing. Rising current transients and negative C-V shifts both show the formation of positive charge in the oxide. However, this charge appears to be situated close to the electrodes rather than in bulk of the oxide and the temperature dependence of the rate of charge accumulation near the electrodes is different for the aluminum and silicon electrodes.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electricity and Magnetism
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE