Research in Integrated, High-Frequency Communication Circuits.
Final rept. 1 May 74-30 Apr 77,
CALIFORNIA UNIV BERKELEY DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCES
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This report summarizes our research results in Integrated, High-Frequency Communication Circuits. A monolithic integrated circuit process giving 1.7 GHz transistors has been realized. This allowed realization of an optimum, wideband, low-distortion, monolithic amplifier with 20 dB gain and 370 MHz bandwidth. The circuit incorporates low-noise Zener diodes and has a worst case noise figure of 9 dB. Research on monolithic VCOs yielded an optimum topology for a temperature-stable high-frequency VCO. A monolithic triangle sine wave converter yielding 0.3 total harmonic distortion over a 70 deg C temperature range has been realized for use with such VCOs. A computer-aided design program SINC-S has been written for the analysis of oscillator circuits. This typically gives a factor of three improvement in computation time compared with conventional techniques. Author
- Electrical and Electronic Equipment
- Non-Radio Communications