MNOS BORAM Manufacturing Methods and Technology Project.
Quarterly progress rept. no. 3, 1 Jan-31 Mar 77,
WESTINGHOUSE DEFENSE AND ELECTRONIC SYSTEMS CENTER BALTIMORE MD SYSTEMS DEVELOPMENT DIV
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A manufacturing methods project has been initiated to establish a pilot production line for metal nitride oxide semiconductors MNOS block oriented random access memory BORAM multichip hybrid circuits. During the past quarter the first set of engineering samples were delivered, and fabrication of the second set was initiated. Further experience was gained with a new low cost MNOS BORAM die. Hybrid circuit and memory card development progressed. In addition, transistor endurance testing concepts were explored. Author
- Electrical and Electronic Equipment
- Computer Hardware
- Solid State Physics