Accession Number:

ADA043268

Title:

Neutron Damage in Silicon from Neutrons with Energy Near 1-MeV.

Descriptive Note:

Memorandum rept.,

Corporate Author:

BALLISTIC RESEARCH LABS ABERDEEN PROVING GROUND MD

Personal Author(s):

• Youngblood,J. E.
• Hollandsworth,C. E.
• Van Antwerp,W. R.

Report Date:

1977-07-01

Pagination or Media Count:

18.0

Abstract:

Silicon diodes have been used to evaluate the damage introduced in silicon by monoenergetic neutrons at several neutron energies near 1 MeV. Eight diodes were irradiated at each of the neutron energies 0.70, 0.96, 1.16, 1.63 and 2.37 MeV. The results are compared with diodes exposed to 14 MeV neutrons and with calculations of displacement permanent damage. It is shown that the damage fluctuates severely for neutron energies near 1 MeV. Author

Descriptors:

• *SILICON
• *RADIATION DAMAGE
• *NEUTRON BEAMS
• COMPUTERIZED SIMULATION
• RATIOS
• DAMAGE ASSESSMENT
• ACCURACY
• SEMICONDUCTOR DIODES
• VARIATIONS
• HIGH ENERGY
• NUCLEAR EXPLOSION DAMAGE

Subject Categories:

• Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE