Electronic Properties of III-V Semiconductor Interfacial Layers.
Annual rept. 15 Jun 76-14 Jun 77,
COLORADO STATE UNIV FORT COLLINS DEPT OF PHYSICS
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Results have been obtained on the use of neutralized ion beam sputtering of Si3N4 on GaAs for MIS applications and on classical and quantum electrical transport in InAs epilayers. Author
- Solid State Physics