Improvement of GaAs Crystal Quality by Means of Liquid-Solid Interface Curvature Control.
Final rept. 1 Jun 76-31 May 77,
GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY N Y
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A solid-convex condition for growth of GaAs single crystal from the melt is sought, so that crystal quality may improve as a function of length. A short-dipole-like thermal configuration with calibrated temperature profile was used in the vertical zone melting technique. but was abandoned because equilibrium vapor transport could not be maintained. Solidification of Iong melt from one end across the melting point equitemperature surface also failed to yield good crystals. The melting point equitemperature surfaces curvature cannot be maintained as the medium changes from air to GaAs, i.e., when the sample tip enters the surface. The second year effort includes two means to produce and hold the melting point equitemperature surface of appropriate curvature. Author