Accession Number:

ADA043128

Title:

Indium Phosphide for Microwave Gunn Devices.

Descriptive Note:

Interim rept. Jun 76-Jun 77,

Corporate Author:

HUGHES RESEARCH LABS MALIBU CALIF

Personal Author(s):

Report Date:

1977-06-01

Pagination or Media Count:

30.0

Abstract:

One-micron-thick films of InP were epitaxially deposited onto single-crystal InP substrates at about 400 deg C by the planar reactive deposition technique. Scanning electron microscope measurements show that smooth surfaces are obtained on 100 substrates, and shingled surfaces are obtained on III substrates. Mass spectrographic analysis indicates that the purity of these films is about 10 parts per million atomic. Electrical evaluation of these films deposited on semi-insulating substrates shows that at room temperature the films are n-type with electron concentrations as low as 10 to the 16th powercu cm and mobilities as high as 1350 sq cmV sec. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE