Indium Phosphide for Microwave Gunn Devices.
Interim rept. Jun 76-Jun 77,
HUGHES RESEARCH LABS MALIBU CALIF
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One-micron-thick films of InP were epitaxially deposited onto single-crystal InP substrates at about 400 deg C by the planar reactive deposition technique. Scanning electron microscope measurements show that smooth surfaces are obtained on 100 substrates, and shingled surfaces are obtained on III substrates. Mass spectrographic analysis indicates that the purity of these films is about 10 parts per million atomic. Electrical evaluation of these films deposited on semi-insulating substrates shows that at room temperature the films are n-type with electron concentrations as low as 10 to the 16th powercu cm and mobilities as high as 1350 sq cmV sec. Author
- Electrical and Electronic Equipment