Second Breakdown Behavior of a Single Microplasma p-n Junction.
TEXAS TECH UNIV LUBBOCK DEPT OF ELECTRICAL ENGINEERING
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This report describes the results of pulsed measurements of the voltage across a p-n junction. The junction was formed by alloying aluminum into n-type silicon to form a pyramidal structure, the apex being the breakdown site. Voltages at second breakdown were related to junction temperature by way of the temperature dependence of the avalanche breakdown voltage. The temperature measurements support a thermal runaway mechanism for second breakdown. Author