A Tentative Model of the Si-SiO2 Interface.
HARRY DIAMOND LABS ADELPHI MD
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A model of the electronic density of states in a metal-insulator-semiconductor structure is proposed. The model is based upon current theories of the electronic properties of amorphous materials and disordered alloys. The model accounts for the presence of band-tial states at the insulator-semiconductor interface and also speculates about the presence of states in the oxide as being due to persistent silicon conduction and valence bands. The derivation of the admittance of a metal-oxide-semiconductor capacitor with a distribution of the interface states is reviewed, and an interpretation of these states employing the macroscopic theory of Brews is later derived. It is shown how these states can be measured by a quasi-static capacitance voltage measurement. Author
- Electrical and Electronic Equipment