Accession Number:

ADA038540

Title:

A Tentative Model of the Si-SiO2 Interface.

Descriptive Note:

Technical rept.,

Corporate Author:

HARRY DIAMOND LABS ADELPHI MD

Personal Author(s):

Report Date:

1977-02-01

Pagination or Media Count:

46.0

Abstract:

A model of the electronic density of states in a metal-insulator-semiconductor structure is proposed. The model is based upon current theories of the electronic properties of amorphous materials and disordered alloys. The model accounts for the presence of band-tial states at the insulator-semiconductor interface and also speculates about the presence of states in the oxide as being due to persistent silicon conduction and valence bands. The derivation of the admittance of a metal-oxide-semiconductor capacitor with a distribution of the interface states is reviewed, and an interpretation of these states employing the macroscopic theory of Brews is later derived. It is shown how these states can be measured by a quasi-static capacitance voltage measurement. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE