Accession Number:

ADA038172

Title:

Manufacturing Methods and Technology Engineering High Efficiency, High Power Gallium Arsenide Read-Type IMPATT Diodes.

Descriptive Note:

Quarterly progress rept. no. 5, 1 Jul-30 Sep 76,

Corporate Author:

RAYTHEON CO WALTHAM MASS SPECIAL MICROWAVE DEVICES

Personal Author(s):

Report Date:

1976-10-01

Pagination or Media Count:

25.0

Abstract:

Work on fabrication of the Confirmatory Samples was initiated. The X and Ku-band wafers were grown. The processing of dice from these wafers was begun. New equipment has been installed on the production line. A hot-gas bonding unit was installed to facilitate chip mounting. A thermal resistance tester was installed to increase production rates. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE