Accession Number:

ADA038052

Title:

Gallium Arsenide Development for High Power Microwave Sources,

Descriptive Note:

Corporate Author:

ROME AIR DEVELOPMENT CENTER GRIFFISS AFB N Y

Personal Author(s):

Report Date:

1977-02-01

Pagination or Media Count:

42.0

Abstract:

Liquid phase epitaxy LPE of Gallium Arsenide conducted at RADC beginning in FY 74 is summarized. A detailed description of the growth procedures using a graphite slider boat is presented. The results of various growth schedules using the graphite slider are given with the conclusion that growth above 800 C is too highly compensated yields material with too many impurities. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE