Accession Number:

ADA037760

Title:

Research in Materials Science

Descriptive Note:

Final technical rept.

Corporate Author:

ILLINOIS UNIV AT URBANA MATERIALS RESEARCH LAB

Personal Author(s):

Report Date:

1977-01-01

Pagination or Media Count:

56.0

Abstract:

The quaternary semiconductor In1-xGaxp1-zAsZ has been exploited to construct light emitting and laser diodes with selective emission from the yellow of the visible spectrum to the infrared. The properties of deep traps which affect the performance of silicon devices has been characterized. Molecular interactions and fast atomic motion has been investigated in liquids, liquid crystals, organic semiconductors, ionic superconductors, layered dichalcogenides and superconductor alloys.

Subject Categories:

  • Lasers and Masers
  • Electrooptical and Optoelectronic Devices
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE