Accession Number:

ADA037243

Title:

Oxide Barriers on GaAs by Neutralized Ion Beam Sputtering

Descriptive Note:

Technical rept.

Corporate Author:

COLORADO STATE UNIV FORT COLLINS DEPT OF PHYSICS

Personal Author(s):

Report Date:

1977-02-10

Pagination or Media Count:

17.0

Abstract:

Tantalum and silicon oxides have been sputter deposited onto gallium arsenide using a 500 eV beam of neutralized argon atoms. MIS devices show very low leakage and capacitances that can be varied from full accumulation to depletion with the application of modest voltages. Other measurements breakdown field, dielectric constant, adherence, Auger profile, and photoluminescence also suggest that these structures hold potential usefulness for insulated gate GaAs circuitry.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE