MOS Transistor Drivers for Large Capacitive Loads.
ILLINOIS UNIV AT URBANA-CHAMPAIGN COORDINATED SCIENCE LAB
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The advent of MOS large-scale integration LSI has focused considerable research activity into studying the compromises involved in efficient integrated circuit design. These trade-offs may involve circuit size, device parameters, circuit speed, and extra processing steps. Available chip size, manufacturing tolerance, and cost place upper and lower limits on the range each of these can take. There may also be some concern about requiring several voltage sources or complicated clocking sequences which cannot be derived on the chip. Author
- Electrical and Electronic Equipment