Accession Number:

ADA036348

Title:

Vertical Channel Metal-Oxide-Silicon Field Effect Transistor.

Descriptive Note:

Annual rept.,

Corporate Author:

WESTINGHOUSE RESEARCH LABS PITTSBURGH PA

Report Date:

1975-11-01

Pagination or Media Count:

54.0

Abstract:

Silicon vertical-channel MOS-transistors VMOST have been designed and fabricated which exhibited high power capabilities approaching 5 watts at frequencies up to 1.5 GHz. Some problems with excess input parasitic capacitance still exists to limit the frequency response of the device, even though significant reductions of parasitic source and gate resistances and feedback capacitance have been achieved. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE