Vertical Channel Metal-Oxide-Silicon Field Effect Transistor.
WESTINGHOUSE RESEARCH LABS PITTSBURGH PA
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Silicon vertical-channel MOS-transistors VMOST have been designed and fabricated which exhibited high power capabilities approaching 5 watts at frequencies up to 1.5 GHz. Some problems with excess input parasitic capacitance still exists to limit the frequency response of the device, even though significant reductions of parasitic source and gate resistances and feedback capacitance have been achieved. Author
- Electrical and Electronic Equipment