Raman Scattering Studies of the GaAs Native Oxide Interface.
Final rept. 1 Jan 75-31 Dec 76,
ROCKWELL INTERNATIONAL THOUSAND OAKS CALIF SCIENCE CENTER
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Oxide films grown by heat treatment on the 100 and 111 faces of GaAs have been studied by Raman backscattering. A spectra consisting of the bulk LO and TO lines of GaAs and two additional lines labeled R1 and R2 is observed on all samples prepared at temperatures above 435 C. The additional modes are attributed to an interface region of perhaps several hundred angstroms thickness beneath the oxide film.
- Solid State Physics