Accession Number:

ADA036244

Title:

Raman Scattering Studies of the GaAs Native Oxide Interface.

Descriptive Note:

Final rept. 1 Jan 75-31 Dec 76,

Corporate Author:

ROCKWELL INTERNATIONAL THOUSAND OAKS CALIF SCIENCE CENTER

Personal Author(s):

Report Date:

1977-02-24

Pagination or Media Count:

16.0

Abstract:

Oxide films grown by heat treatment on the 100 and 111 faces of GaAs have been studied by Raman backscattering. A spectra consisting of the bulk LO and TO lines of GaAs and two additional lines labeled R1 and R2 is observed on all samples prepared at temperatures above 435 C. The additional modes are attributed to an interface region of perhaps several hundred angstroms thickness beneath the oxide film.

Subject Categories:

  • Optics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE