Interface States in Schottky Barrier Diodes.
RENSSELAER POLYTECHNIC INST TROY N Y DEPT OF ELECTRICAL AND SYSTEMS ENGINEERING
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The electrical behavior of Schottky barrier junctions before and after neutron irradiation have been explored. Guarded AunGaAs diodes were fabricated from bulk and epitaxial material with a preirradiation n factor of 1.03 and saturation current density of 10 to the minus 8th power ampssq cm. After irradiation with low neutron fluences i.e., carrier removal less than 10 the reverse current increased by one to two orders of magnitude with only a slight increase in n factor. I-V and C-V measurements from 77K to 360K and photoelectric measurements at room temperature were taken in developing an understanding of the effect of neutron irradiation on the electrical characteristics of these Schottky barrier diodes including with transient ionizing radiation. The experimental results have been interpreted from an interface state density model as suggested by Levine. The results of this model have been compared to those reported by Levine and Crowell and Roberts with unirradiated diodes. The limitations of interpreting the results using the interface state density model have been delineated experimentally. Calculations indicate that current from field-enhanced emission is present in addition to thermionic emission current from the interface state model. Implications of these results on the use of Schottky junction devices in neutron radiation environments are presented. Author
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