Ion Implantation Impurity Analysis by Glow Discharge Optical Spectroscopy.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
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The Glow Discharge Optical Spectroscopy technique was investigated to determine if it could be used to measure total impurity concentration profiles in unannealed ion implanted GaAs. Cadmium, zinc, and magnesium ions, which are common p-type dopants in GaAs, were implanted at energies of 99 keV and 120 keV and fluences ranging from 10 to the 14th power to 10 to the 16th power ionssq cm. The implanted GaAs samples were sputtered in a low pressure dc glow discharge using argon gas. Intensity of a strong emission line, characteristic of the implanted impurity, was monitored as a function of time. This intensity was combined with independently measuring GaAs substrate sputtering rates to calculate total impurity concentration profiles. Uncalibrated concentration profiles were obtained for Zn and Mg in GaAs. None was obtained for Cd. Author
- Solid State Physics