Determining Impurities in Gallium Phosphide by Analyzing Cathodoluminescence.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
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The cathodoluminescence emission spectra of four GaP samples, three grown by a liquid phase epitaxialLPE process and the fourth bulk solution grownBSG, was studied in order to identify impurities present in the samples. The samples were excited by a 20 kV, 1.0 microampere electron beam and the spectra, photoelectrically detected, were recorded at various sample temperatures between 8 K and 100 K using liquid helium and liquid nitrogen as coolants. The impurities, identified by comparison with the literature, were S, N, C, Si, and O. In addition, two of the samples showed the presence of Cu although only one sample was intentionally Cu doped. The cathodoluminescence procedure was found to be as sensitive and effective as the photoluminescence procedure in detecting impurities, and the LPE process appeared to produce the purest samples. Author
- Atomic and Molecular Physics and Spectroscopy
- Solid State Physics