Gallium Diffusion in Silicon Dioxide. Rutherford Backscattering Analysis of Thin Films.
Final rept. 1 Sep 73-28 Aug 74,
AIR FORCE MATERIALS LAB WRIGHT-PATTERSON AFB OHIO
Pagination or Media Count:
The behavior of Ga in sputtered SiO2 films is examined with the result that diffusion is observed during annealing at 850 C. The accumulated evidence indicates that SiO2 is not an effective film to use on a GaP or GaAs for protection against Ga loss during high temperature anneals. The method employed to make the measurements, Rutherford backscattering RBS analysis of SiO2GaSiO2 sandwiches, is demonstrated to be effective and applicable to other systems. The value of RBS as a general tool for thin film analysis is demonstrated by measuring the thicknesses and compositions of several types of films as well as the concentrations and locations of impurities. Author
- Inorganic Chemistry
- Solid State Physics