Accession Number:

ADA031740

Title:

Gallium Diffusion in Silicon Dioxide. Rutherford Backscattering Analysis of Thin Films.

Descriptive Note:

Final rept. 1 Sep 73-28 Aug 74,

Corporate Author:

AIR FORCE MATERIALS LAB WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

Report Date:

1976-05-01

Pagination or Media Count:

101.0

Abstract:

The behavior of Ga in sputtered SiO2 films is examined with the result that diffusion is observed during annealing at 850 C. The accumulated evidence indicates that SiO2 is not an effective film to use on a GaP or GaAs for protection against Ga loss during high temperature anneals. The method employed to make the measurements, Rutherford backscattering RBS analysis of SiO2GaSiO2 sandwiches, is demonstrated to be effective and applicable to other systems. The value of RBS as a general tool for thin film analysis is demonstrated by measuring the thicknesses and compositions of several types of films as well as the concentrations and locations of impurities. Author

Subject Categories:

  • Inorganic Chemistry
  • Optics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE