Wide-Band Microwave Amplifier Realizations in Microstrip Employing a GaAs Schottky-Barrier Field-Effect Transistor.
Interim rept. 1974-1976,
CORNELL UNIV ITHACA N Y
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This work deals with the realization of two 4-8 GHz flat-gain amplifier designs in microstrip using a single GaAs Schottky-barrier field-effect transistor. Two aspects of microstrip amplifier realization are considered. The first aspect is accurate realization of required lumped and distributed circuit elements. The second involves detailed mathematical modelling of practical circuit elements, permitting computer analysis and optimization of complete amplifier networks. After techniques for analysis and design of microstrip transmission lines are reviewed including loss and dispersion effects, particular areas of difficulty in practical design and fabrication of amplifiers are studied. These areas include microwave short circuit DC open realization using radial line sectors, fabrication of lumped inductors from Hewlett-Packard SBFET leads Package 60, and circuit modelling of microstrip to coaxial transitions. Two versions of a simple amplifier design were built and measured on a Hewlett-Packard microwave network analyzer. A Fortran computer analysis program based on transmission scattering matrices was written to calculate the scattering parameters of ladder network models such as this first amplifier. The program aided in improving design methods such as the realization of lumped inductors.
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- Solid State Physics