Accession Number:

ADA031332

Title:

Study of Electronic Transport and Trapping in Technologically Important Insulators.

Descriptive Note:

Final rept.,

Corporate Author:

PRINCETON UNIV N J DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1976-04-01

Pagination or Media Count:

52.0

Abstract:

Studies of electron trapping in unannealed aluminum-implanted silicon-dioxide films show large concentrations of electron traps not present in control samples. A substantial fraction of the traps appear to be associated with displacement damage created by the implantation. A study of electron-beam-induced conduction in thermally grown silicon dioxide indicates that substantial concentrations of electron traps are generated through the oxide by bombardment with a nonpenetrating electron beam. This conclusion has been confirmed by investigation of the electron-trapping properties of oxides that had previously been subjected to nonpenetrating electron bombardment. A study of lateral nonuniformities and interface states in MIS structures has led to the development of three new methods for distinguishing between these two effects and to a new and simple method for determining the distribution of flatband voltages in a nonuniform MIS capacitor. Author

Subject Categories:

  • Nuclear Radiation Shielding, Protection and Safety
  • Particle Accelerators
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE