Accession Number:

ADA031086

Title:

Preparation and Properties of Thin Film GaxIn(1-x)As and GaAsxSb(1-x) Alloy Films

Descriptive Note:

Final rept. 1 Dec 1973-15 Nov 1974

Corporate Author:

UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB

Personal Author(s):

Report Date:

1976-07-10

Pagination or Media Count:

33.0

Abstract:

Epitaxial alloy films were grown from solutions using three versions of the growth reactor. An effort was made to closely monitor the reducing quality of the H2 atmosphere in the reactor. Failure to grow suitably thin films is attributed to the inadequate quality of this atmosphere.

Subject Categories:

  • Test Facilities, Equipment and Methods
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE