Preparation and Properties of Thin Film GaxIn(1-x)As and GaAsxSb(1-x) Alloy Films
Final rept. 1 Dec 1973-15 Nov 1974
UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB
Pagination or Media Count:
Epitaxial alloy films were grown from solutions using three versions of the growth reactor. An effort was made to closely monitor the reducing quality of the H2 atmosphere in the reactor. Failure to grow suitably thin films is attributed to the inadequate quality of this atmosphere.
- Test Facilities, Equipment and Methods
- Solid State Physics