Accession Number:

ADA030968

Title:

Permanent and Transient Radiation Effects on Thin-Oxide (200-A) MOS Transistors

Descriptive Note:

Technical rept.

Corporate Author:

HARRY DIAMOND LABS ADELPHI MD

Personal Author(s):

Report Date:

1976-06-01

Pagination or Media Count:

27.0

Abstract:

An approach for hardening metal oxide semiconductor MOS transistors to ionizing radiation by reducing the thickness of the gate oxide is presented. It is shown that Si gate, n-channel MOS field-effect transistors with oxides 200 A thick continue to operate in the enhancement mode after irradiation to 1,000, 000 rads Si with a positive bias applied to the gate during the irradiation. This represents a considerable improvement over conventional thick-oxide approximately 1000-A devices, which go into the depletion mode of operation at 100,000 rads Si. The thin-oxide devices after exposure to pulsed ionizing radiation showed improved performance over that of thick-oxide devices. It was found also that device operation following irradiation depended on the source- drain spacing Channel length Shortening the channel length leads to an increased shift of the threshold voltage induced by irradiation.

Subject Categories:

  • Electrical and Electronic Equipment
  • Nuclear Radiation Shielding, Protection and Safety
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE