Accession Number:

ADA030864

Title:

Research on Gunn Effect Materials (III-V Compounds)

Descriptive Note:

Annual rept. 1 Jul 1975-30 Jun 1976

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Personal Author(s):

Report Date:

1976-09-01

Pagination or Media Count:

47.0

Abstract:

Several novel preparation techniques are reported to prepare high purity semi-insulating GaAs single crystals having minimum impurity doping. The growth techniques for InP single crystals are reported. A new method to prepare epitaxial GaAs on in-situ cleaned substrates is presented.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE