Accession Number:
ADA030864
Title:
Research on Gunn Effect Materials (III-V Compounds)
Descriptive Note:
Annual rept. 1 Jul 1975-30 Jun 1976
Corporate Author:
NAVAL RESEARCH LAB WASHINGTON DC
Personal Author(s):
Report Date:
1976-09-01
Pagination or Media Count:
47.0
Abstract:
Several novel preparation techniques are reported to prepare high purity semi-insulating GaAs single crystals having minimum impurity doping. The growth techniques for InP single crystals are reported. A new method to prepare epitaxial GaAs on in-situ cleaned substrates is presented.
Descriptors:
Subject Categories:
- Crystallography
- Solid State Physics