Accession Number:

ADA030777

Title:

Investigation of Defects and Impurities in Silicon-on-Sapphire

Descriptive Note:

Interim technical rept. 15 Jul 1975-31 Jan 1976

Corporate Author:

ROCKWELL INTERNATIONAL ANAHEIM CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER

Personal Author(s):

Report Date:

1976-07-01

Pagination or Media Count:

53.0

Abstract:

This report covers the second six months of a program to investigate the effects of defects and impurities in SOS materials on the electrical characteristics and radiation tolerance of CMOSSOS devices. Additional chemical surface-etch experiments and IMMA analyses were completed during this phase of the program. This phase of the study focused on fabricating CMOSSOS devices on the various substrate groupings examined in the first phase of this study. Electrical parameter data and radiation hardness data were obtained for the CMOSSOS devices and correlated with SOS material characteristics.

Subject Categories:

  • Ceramics, Refractories and Glass
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE