Investigation of Defects and Impurities in Silicon-on-Sapphire
Interim technical rept. 15 Jul 1975-31 Jan 1976
ROCKWELL INTERNATIONAL ANAHEIM CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER
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This report covers the second six months of a program to investigate the effects of defects and impurities in SOS materials on the electrical characteristics and radiation tolerance of CMOSSOS devices. Additional chemical surface-etch experiments and IMMA analyses were completed during this phase of the program. This phase of the study focused on fabricating CMOSSOS devices on the various substrate groupings examined in the first phase of this study. Electrical parameter data and radiation hardness data were obtained for the CMOSSOS devices and correlated with SOS material characteristics.
- Ceramics, Refractories and Glass