Accession Number:

ADA030575

Title:

Study of the Electronic Surface State of 3 - 5 Compounds

Descriptive Note:

Semi-annual technical progress rept.

Corporate Author:

STANFORD UNIV CA STANFORD ELECTRONICS LABS

Personal Author(s):

Report Date:

1975-09-15

Pagination or Media Count:

178.0

Abstract:

A model for the surface state distribution on the clean 110 face of GaAs, InP, and GaSb has been established. Any filled surface states lie well below the valence band maximum VBM for all three materials. There is an empty surface state band with a lower edge 0.7 eV below the conduction band minimum CBM in GaAs, and 0.25 eV below the CBM for InP. There are no empty or filled surface states within the bandgap for GaSb. As will be seen later, this profoundly affects the behavior of GaSb when Cs is added to the surface. For all three materials the empty states are associated with the column III surface atoms, and the filled surface states are associated with the column V surface atoms. This model can probably be generalized to other III-V semiconductors and to faces other than the 110 face.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE