Accession Number:
ADA030153
Title:
Ion Implantation in Cadmium Telluride.
Descriptive Note:
Corporate Author:
STANFORD RESEARCH INST MENLO PARK CALIF
Personal Author(s):
Report Date:
1976-08-01
Pagination or Media Count:
121.0
Abstract:
Results of investigations conducted on cadmium telluride CdTe samples are presented in this two-part document. Part 1 describes the effects of ion implantation doping in CdTe using transmission electron microscopy TEM and electrical evaluation as investigative tools. Part 2 describes the investigation of microstructural defects in CdTe and interfacial reactions at the PtCdTe contact and subsequent correlations with electrical measurements on CdTe room-temperature gamma ray detectors, and possible solar cell uses. This study has shown that the previous experimental data obtained on arsenic and krypton-implanted samples can be explained by the radiation-induced formation of electrically active defects rather than by substitutional impurity doping. A model has been proposed entailing the liberation of cadmium vacancy acceptors from radiation-induced loops. Using column I dopants potassium, sodium, and cesium to fill available cadmium cacancy sites, high doping efficiencies and true chemical doping have been obtained in ion-implanted CdTe. Investigations of CdTe radiation detector materials have shown a direct correlation between defect content, excess leakage currents and polarization on fabricated devices.
Descriptors:
- *ION IMPLANTATION
- *CADMIUM TELLURIDES
- *DOPING
- HALL EFFECT
- SODIUM
- SINGLE CRYSTALS
- EPITAXIAL GROWTH
- CESIUM
- ELECTRICAL PROPERTIES
- ELECTRON MICROSCOPY
- CRYSTAL DEFECTS
- SOLAR CELLS
- GAMMA RAYS
- INFRARED DETECTORS
- PLATINUM
- ARSENIC
- POTASSIUM
- RADIATION MEASURING INSTRUMENTS
- RADIATION EFFECTS
- ELECTRIC CONTACTS
- KRYPTON
Subject Categories:
- Electrical and Electronic Equipment
- Fabrication Metallurgy
- Solid State Physics