Accession Number:

ADA030153

Title:

Ion Implantation in Cadmium Telluride.

Descriptive Note:

Corporate Author:

STANFORD RESEARCH INST MENLO PARK CALIF

Report Date:

1976-08-01

Pagination or Media Count:

121.0

Abstract:

Results of investigations conducted on cadmium telluride CdTe samples are presented in this two-part document. Part 1 describes the effects of ion implantation doping in CdTe using transmission electron microscopy TEM and electrical evaluation as investigative tools. Part 2 describes the investigation of microstructural defects in CdTe and interfacial reactions at the PtCdTe contact and subsequent correlations with electrical measurements on CdTe room-temperature gamma ray detectors, and possible solar cell uses. This study has shown that the previous experimental data obtained on arsenic and krypton-implanted samples can be explained by the radiation-induced formation of electrically active defects rather than by substitutional impurity doping. A model has been proposed entailing the liberation of cadmium vacancy acceptors from radiation-induced loops. Using column I dopants potassium, sodium, and cesium to fill available cadmium cacancy sites, high doping efficiencies and true chemical doping have been obtained in ion-implanted CdTe. Investigations of CdTe radiation detector materials have shown a direct correlation between defect content, excess leakage currents and polarization on fabricated devices.

Subject Categories:

  • Electrical and Electronic Equipment
  • Fabrication Metallurgy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE