Accession Number:

ADA030037

Title:

Ellipsometric Determination of the Index of Refraction of Thin Selenide Films.

Descriptive Note:

Master's thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1975-03-01

Pagination or Media Count:

45.0

Abstract:

Electron beam evaporation was used to produce thin zinc selenide ZnSe semiconductor films on glass substrates. Deposition in a vacuum of .000001 Torr yielded films free of apparent defects. A Fortran IV computer program by F. L. McCrackin National Bureau of Standards Technical Note 479 and two ellipsometers were used to measure the refractive indices and thicknesses of four ZnSe films. The results presented are based on measurements with a Gaertner L118GT ellipsometer using a HeNe laser 6328A and a mercury lamp 5461A for light sources and a Rudolph Type 43702-200E ellipsometer using a mercury light source. For film thicknesses of 1074A, 1743A, 4673A, and 7656A, the refractive indices using the mercury lamp were found to be 2.687, 2.494, 2.137, and 2.160, respectively, with zero for the values of the imaginary parts of the refractive indices. Using the HeNe laser, the corresponding values of the refractive indices were found to be 2.810, 2.398, 2.427 and 2.378. More data needs to be taken for a larger sample of film thicknesses. Special ellipsometric techniques may be required to better ascertain the absorptive character of thin zinc selenide films. Author

Subject Categories:

  • Optics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE