Accession Number:

ADA030022

Title:

Fabrication and Evaluation of InSb CID Arrays

Descriptive Note:

Final rept. Sep 1974-Sep 1975

Corporate Author:

GENERAL ELECTRIC CO SYRACUSE NY OPTOELECTRONIC SYSTEMS OPERATION

Personal Author(s):

Report Date:

1976-08-01

Pagination or Media Count:

98.0

Abstract:

The successful development of InSb charge injection device CID arrays has been made possible by the recent success of our InSb MIS technology, which is now capable of producing two-dimensional InSb CID arrays. This Final Report describes the development of 1 x 16 two-dimensional InSb CID arrays. The InSb wafer material preparation is described in Section 2. The improved interface state densities of InSb MIS structures are presented in Section 3. The sensitivity measurements of linear arrays is discussed and the results are presented in Section 4. In Section 5, we describe the array fabrication process silicon shift register scanners are discussed in Section 6. The array evaluation measurements are discussed in Section 7 and finally, conclusions and recommendations are presented in Section 8.

Subject Categories:

  • Electrical and Electronic Equipment
  • Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE