Fabrication and Evaluation of InSb CID Arrays
Final rept. Sep 1974-Sep 1975
GENERAL ELECTRIC CO SYRACUSE NY OPTOELECTRONIC SYSTEMS OPERATION
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The successful development of InSb charge injection device CID arrays has been made possible by the recent success of our InSb MIS technology, which is now capable of producing two-dimensional InSb CID arrays. This Final Report describes the development of 1 x 16 two-dimensional InSb CID arrays. The InSb wafer material preparation is described in Section 2. The improved interface state densities of InSb MIS structures are presented in Section 3. The sensitivity measurements of linear arrays is discussed and the results are presented in Section 4. In Section 5, we describe the array fabrication process silicon shift register scanners are discussed in Section 6. The array evaluation measurements are discussed in Section 7 and finally, conclusions and recommendations are presented in Section 8.
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