Optical Studies of Ion Implanted Species in Group IV and III-V Semiconductors.
Final rept. 1 Jun 71-31 May 76,
UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB
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This is the final report of a grant to study the optical properties of ion implanted semiconductors. The materials studied are primarily GaAs and GaP. High energy ion implants were studied by measuring the changes in the near infrared dielectric constant, the localized mode absorption and the reflection near the fundamental lattice vibrational band. The implantation process produces substantial changes in all three properties including increases in the high frequency dielectric constant, observable impurity-induced absorption bands, and a total alteration of the reststrahlen behavior. Post implantation annealing of these changes has also been investigated. The material has all been published and a list of the papers is included in the report. Author
- Solid State Physics