Accession Number:

ADA028884

Title:

The Physics of Reliability of Future Electronic Devices

Descriptive Note:

Final rept. 1 Jun 1974-30 Nov 1976

Corporate Author:

IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Personal Author(s):

Report Date:

1976-05-01

Pagination or Media Count:

112.0

Abstract:

Among the major reliability problems in semiconductor devices are semiconductor surface defects, dielectric breakdown, interdiffusion across interfaces, and corrosion. In the area of surface defects, the authors have used scanned optical techniques to probe defects and recombination centers on silicon surfaces. Crystallographic defects on silicon surfaces, of the type measured by the scanned optical techniques are known to promote device failure. The problem of dielectric breakdown in SiO2, which is particularly important to the reliability of integrated circuits, was investigated both theoretically and experimentally. Interface reactions were found to be particularly important to the reliability of Schottky barriers. Several classifications of metals have been determined and studied with respect to their behavior in the formation of metal silicide Schottky barrier contacts to silicon. On the basis of the classification of reaction properties, the reaction between the metal and either silicon or SiO2 can be explained and understood.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE