Microwave Solid-State Device and Circuit Studies.
Technical rept. 1 Sep 75-1 Mar 76,
MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB
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A two-dimensional finite-element simulation of a GaAs MESFET has been performed and a detailed final report completed. Results are shown for a lateral doping profile which reduces velocity saturation effects, thus improving performance. A procedure is described for fabricating the source and channel regions of a proposed vertical FET structure. Preliminary results are presented and discussed. Input and output matching circuits for a commercial JFET were designed by use of S-parameter based numerical techniques. Results of an experimental study of the first amplifier design are presented. Various methods for the measurement of frequency shift in pulsed oscillators have been studied. Work has begun on frequency shift measurements with pulsed TRAPATT oscillators. An investigation has been started to study the basic operating principles of controlled avalanche transit time CATT devices. The relative advantages and disadvantages are presented and discussed.
- Electrical and Electronic Equipment