Scattering Parameter Models.
TRW SYSTEMS GROUP REDONDO BEACH CALIF
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The technique of modeling semiconductor microwave devices using scattering parameter or s parameter and other supplemental measurements is presented. Nonlinear time-domain models that are computationally efficient and compatible with circuit analysis codes such as SCEPTRE have been developed for six types of microwave devices, demonstrating the usefulness and practicality of the s parameter modeling techniques and approach. Two different model accuracy verification techniques were developed for the diodes and transistors, respectively. Ionizing and neutron irradiation and post-radiation characterization tests were performed on the modeled devices. The radiation effects on these devices were incorporated into their time-domain models where significant.
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