Accession Number:

ADA028519

Title:

Reliability Tests and Analysis of CMOS NOR Gates with Application of Nematic Liquid Crystal Failure Analysis Techniques,

Descriptive Note:

Corporate Author:

ROME AIR DEVELOPMENT CENTER GRIFFISS AFB N Y

Report Date:

1976-06-01

Pagination or Media Count:

199.0

Abstract:

A reliability evaluation program covering 180 CMOS devices from four vendors has been in progress at RADC for approximately two years. The date codes for these devices range from 1969 to 1973. The testing program included storage temperature, thermal shock, moisture resistance wbias, temperature cycling wbias, and bias power and temperature step stress BPATSS. The results are presented detailing the predominant failure modes and mechanisms which were induced by this stress testing program. A concurrent investigation of nematic liquid crystal techniques for failure analysis of dielectric defects in MOS structures is included as an appendix to this CMOS reliability report.

Subject Categories:

  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE