Accession Number:

ADA028098

Title:

Theory of Bound States Associated with n-Type Inversion Layers on Silicon (001) Surfaces.

Descriptive Note:

Interim rept.,

Corporate Author:

CALIFORNIA UNIV IRVINE DEPT OF PHYSICS

Personal Author(s):

Report Date:

1976-01-01

Pagination or Media Count:

6.0

Abstract:

Binding energies are calculated as functions of electric field for several electronic bound states of impurities localized at the interface between SiO2 and an n-type inversion layer on Si001. The intensity of electron-dipole transitions and the effect of screening by free carriers are investigated.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE