Theory of Bound States Associated with n-Type Inversion Layers on Silicon (001) Surfaces.
CALIFORNIA UNIV IRVINE DEPT OF PHYSICS
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Binding energies are calculated as functions of electric field for several electronic bound states of impurities localized at the interface between SiO2 and an n-type inversion layer on Si001. The intensity of electron-dipole transitions and the effect of screening by free carriers are investigated.
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