Accession Number:

ADA028034

Title:

Radiation Effects on Oxides, Semiconductors, and Devices.

Descriptive Note:

Final rept. May 75-Apr 76,

Corporate Author:

NORTHROP RESEARCH AND TECHNOLOGY CENTER HAWTHORNE CALIF

Report Date:

1976-06-01

Pagination or Media Count:

182.0

Abstract:

Analytical and experimental studies of charge transport and charge buildup in aluminum-implanted SiO2 were performed which indicate that both electrons and holes are trapped in the implanted region. Results of an ionizing dose rate study for CMOS devices are presented in which the effects of two low dose rates 0.2 and 70 radsSisec are compared. Charge transport studies on pedigreed MOS capacitors were made and results compared to those for similar devices. Detailed measurements of charge transport in radiation-hardened SiO2 films were performed as a function of temperature, applied electric field, and time following pulsed excitation. Determinations of SiO2 hole mobility were also made as a function of time, temperature, and field. An investigation of charge buildup at low temperatures in radiation-hardened MOS capacitors was performed and severe flatband voltage shifts were noted. Employment of ion-implanted oxides was observed to reduce this effect. A bibliography of published work on neutron-irradiated silicon is included.

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE