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Reliability Prediction for Microwave Transistors.
Final technical rept. Jan 73-Dec 75,
GENERAL ELECTRIC CO SYRACUSE N Y ELECTRONICS LAB
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This report presents the results of a study to evaluate the failure mechanisms that occur in state-of-the-art microwave power transistors, and to predict the reliability and lifetime that might be expected from these devices. A series of accelerated r-f life tests of both aluminum and refractory metal-gold metallized transistors were carried out under both CW and pulsed conditions. The aluminum metallized devices were found to be susceptible to failure due to electromigration voiding of the metallization. This failure mechanism will limit the useful lifetime of these devices. The refractory metal-gold devices were found to have a long life capability, but metallization peeling on some devices limited their lifetime during these tests. Further effort is necessary to evaluate the peeling problem and proposed solutions. Author
APPROVED FOR PUBLIC RELEASE