Accession Number:

ADA027443

Title:

Optical and EPR Studies of Irradiated Silicon Dioxide Materials.

Descriptive Note:

Final progress rept. 1 Jul 75-30 Jun 76,

Corporate Author:

LEHIGH UNIV BETHLEHEM PA DEPT OF PHYSICS

Personal Author(s):

• Jones,Colin E.

Report Date:

1976-07-15

Pagination or Media Count:

40.0

Abstract:

Optical absorption, luminescence, and electron spin resonance have been measured for crystalline and amorphous silicon dioxide materials. The luminescence data and its correlation with the optical absorption and spin resonance form basically new areas of research. For fast neutron irradiation the luminescence increases with irradiation, and a band tentatively identified with the oxygen vacancy correlates with the optical absorption and spin resonance for this defect. Above 10 to the 20th power neutronssq cm the luminescence, especially the oxygen vacancy luminescence, decreases, suggesting the formation of a large number of nonluminescent competing traps. Gamma irradiation has a much larger effect on amorphous silicon dioxide than on crystalline materials. The same effect seems to be present in gamma irradiated metal-oxide semiconductors up through 10 to the 7th power.

Descriptors:

• *SILICON DIOXIDE
• *RADIATION DAMAGE
• ELECTRONIC EQUIPMENT
• AMORPHOUS MATERIALS
• CRYSTALS
• METAL OXIDE SEMICONDUCTORS
• ELECTRON SPIN RESONANCE
• OXYGEN
• DEFECTS(MATERIALS)
• QUARTZ
• GAMMA RAYS
• ABSORPTION SPECTRA
• LUMINESCENCE
• NEUTRON IRRADIATION
• TRANSIENT RADIATION EFFECTS

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE