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Gallium Arsenide Vertical Channel Insulated Gate Field-Effect Transistor.
Annual rept. Jan-Dec 75,
WESTINGHOUSE ELECTRIC CORP PITTSBURGH PA RESEARCH AND DEVELOPMENT CENTER
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Basic studies of the various technologies relevant to the development of a power microwave vertical channel gallium arsenide insulated gate field-effect transistor have been carried out. The results indicate that while some technologies are in hand, a number of problems still exist in the areas of insulator stability and the n-p-n--n profile formation. Author
APPROVED FOR PUBLIC RELEASE