Accession Number:

ADA027442

Title:

Gallium Arsenide Vertical Channel Insulated Gate Field-Effect Transistor.

Descriptive Note:

Annual rept. Jan-Dec 75,

Corporate Author:

WESTINGHOUSE ELECTRIC CORP PITTSBURGH PA RESEARCH AND DEVELOPMENT CENTER

Personal Author(s):

• Driver,M. C.
• Tremere,D. A.
• Heng,T. M. S.

Report Date:

1976-06-18

Pagination or Media Count:

56.0

Abstract:

Basic studies of the various technologies relevant to the development of a power microwave vertical channel gallium arsenide insulated gate field-effect transistor have been carried out. The results indicate that while some technologies are in hand, a number of problems still exist in the areas of insulator stability and the n-p-n--n profile formation. Author

Descriptors:

• *GALLIUM ARSENIDES
• *FIELD EFFECT TRANSISTORS
• INSULATION
• GATES(CIRCUITS)
• ION IMPLANTATION
• VERTICAL ORIENTATION
• DIFFUSION
• CHANNELS

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE