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Solid Phase Epitaxial Growth.
Annual progress rept. 1 May 75-30 Apr 76,
HUGHES RESEARCH LABS MALIBU CALIF
Pagination or Media Count:
The preliminary results of an investigation designed to determine the effects of process-related interfacial and bulk contamination upon the physical and electrical properties of Si films grown by solid phase epitaxy SPE are reported. For control purposes, uncontaminated Si films were grown and characterized, starting from thin-film crystal-SiPdamorphous-Si structures fabricated in ultrahigh vacuum. Comparison of defects observed in these films with films grown in the presence of known contamination by other workers suggests that some intentional contamination may be necessary for growth of high quality layers by the SPE process.
APPROVED FOR PUBLIC RELEASE