Accession Number:

ADA026914

Title:

Physical Models of MOSFET Devices.

Descriptive Note:

Final rept.,

Corporate Author:

FLORIDA UNIV GAINESVILLE ELECTRON DEVICE RESEARCH CENTER

Personal Author(s):

• Kennedy,David P.
• Lindholm,Fredrik A.

Report Date:

1975-10-01

Pagination or Media Count:

161.0

Abstract:

This report presents research directed toward the development of a mathematical model for MOSFET operation that is based upon physical mechanisms associated with the operation of this semiconductor device. A principal objective of this effort is to develop a simple engineering type model that implicitly contains two-dimensional mechanisms known to exist in this device. Included in this objective is the development of a lumped network representation for MOSFET operation that can be expanded to include these two-dimensional mechanisms of operation. Chapter I of this final report outlines a mathematical model for MOSFET operation that appears applicable into the weak inversion mode of operation. Chapter 2 presents a quantum mechanical solution for the inversion layer carrier distribution in a MOSFET. Chapter 3 provides a first step toward the development of a lumped network representation for the MOSFET that is based upon first principles.

Descriptors:

• *MATHEMATICAL MODELS
• *FIELD EFFECT TRANSISTORS
• *METAL OXIDE SEMICONDUCTORS
• *MOSFET SEMICONDUCTORS
• TUNNELING(ELECTRONICS)
• THEORY
• CHARGE CARRIERS
• DRIFT
• QUANTUM ELECTRONICS
• INVERSION
• DIFFUSION
• ELECTRIC CURRENT
• MAXWELLS EQUATIONS
• SCHRODINGER EQUATION
• EQUIVALENT CIRCUITS
• HARTREE FOCK APPROXIMATION

Subject Categories:

• Electricity and Magnetism
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE