Physical Models of MOSFET Devices.
FLORIDA UNIV GAINESVILLE ELECTRON DEVICE RESEARCH CENTER
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This report presents research directed toward the development of a mathematical model for MOSFET operation that is based upon physical mechanisms associated with the operation of this semiconductor device. A principal objective of this effort is to develop a simple engineering type model that implicitly contains two-dimensional mechanisms known to exist in this device. Included in this objective is the development of a lumped network representation for MOSFET operation that can be expanded to include these two-dimensional mechanisms of operation. Chapter I of this final report outlines a mathematical model for MOSFET operation that appears applicable into the weak inversion mode of operation. Chapter 2 presents a quantum mechanical solution for the inversion layer carrier distribution in a MOSFET. Chapter 3 provides a first step toward the development of a lumped network representation for the MOSFET that is based upon first principles.
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