DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click HERE
to register or log in.
Physical Models of MOSFET Devices.
FLORIDA UNIV GAINESVILLE ELECTRON DEVICE RESEARCH CENTER
Pagination or Media Count:
This report presents research directed toward the development of a mathematical model for MOSFET operation that is based upon physical mechanisms associated with the operation of this semiconductor device. A principal objective of this effort is to develop a simple engineering type model that implicitly contains two-dimensional mechanisms known to exist in this device. Included in this objective is the development of a lumped network representation for MOSFET operation that can be expanded to include these two-dimensional mechanisms of operation. Chapter I of this final report outlines a mathematical model for MOSFET operation that appears applicable into the weak inversion mode of operation. Chapter 2 presents a quantum mechanical solution for the inversion layer carrier distribution in a MOSFET. Chapter 3 provides a first step toward the development of a lumped network representation for the MOSFET that is based upon first principles.
APPROVED FOR PUBLIC RELEASE