III-V Surface Studies.
Final rept. 1 Nov 73-30 Jun 75,
RCA LABS PRINCETON N J
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A studies program has been carried out on the surfaces of III-V compounds with the purpose of understanding how their surface properties, structural, chemical, and electronic, relate to efficient photoemission. In particular, the development and characteristics of the negative electron affinity NEA surface, activated by the adsorption of cesium and oxygen, have been investigated. The materials studied were GaAs, GaXIn1-xAs, InSb, InP, and AlAs they were chosen to represent, as broadly and as feasibly as possible, the family of commonly used III-V semiconductors in terms of bandgap and constitutent atom size. For each of these materials, three primary crystallographic faces were studied, the 100, 111A, and 111B. The primary investigatory tools used were Low Energy Electron Diffraction LEED, Auger Electron Spectroscopy AES, Quadrupole Mass Analysis QMA, photoemission measurements, and temperature. Most of the detailed characterization of the step-by-step development of the NEA surface was done on GaAs. Author
- Electricity and Magnetism