Compounds and Properties of the Si-Al-O-N System.
Interim rept. 1 Oct 73-1 Oct 75,
TECHNOLOGY INC DAYTON OHIO
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A product or quasi-equilibrium diagram for compounds formed in the system Si-Al-O-N at 1800 C in 1 atm N2 is presented. X-ray diffraction spectra for several new phases are given and the reaction and sintering processes are discussed. Data for the lattice expansion of the Beta-Si3N4 structure accompanying the incorporation of Al and O is presented, and used to calculate theoretical densities. Author
- Ceramics, Refractories and Glass