A Two-Dimensional Simulation of MESFETS.
MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB
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During the 1960s the bipolar junction transistor BJT was making steady progress in operating in the low GHz range as the active device in linear amplifier systems. Now the state-of-the-art junction field-effect transistor JFET, in particular the metal semiconductor FET MESFET, promises to supplant the BJT for microwave operation while utilizing its inherent majority carrier device noise advantage. Although the JFET was investigated by Shockley in 1952, its development lagged that of the BJT due to fabrication difficulties. Present performance of the JFET has improved due to the ability of present technology to produce well-defined, narrow-gate devices 0.5 micrometers at present, since JFET performance is limited mostly by gate length. Speculatively, operation of the GaAs MESFET will be pushed toward operation at 50 GHz or greater with significant gain to allow MESFET cascades to be used for large gain at microwave frequencies.
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