Accession Number:

ADA026222

Title:

Packaging Effects on Semiconductor Device Radiation Response.

Descriptive Note:

Final phase rept. Jul 74-Apr 75,

Corporate Author:

INTELCOM RAD TECH SAN DIEGO CALIF

Report Date:

1975-05-15

Pagination or Media Count:

195.0

Abstract:

This report examines the effect of FXR-stimulated, re-emitted radiation from the packages of three planar-epitaxial transistors and two high-level NAND gate integrated circuits on the photocurrent response of the devices. Experimental measurements were made on the five devices in both low- and high-engery photon FXR environments. The experimental results are compared with a radiation transport analysis including use of the SANDYL code of the device package, materials, and proton energy spectrum. This work adds further verification to a procedure for extending simulation test data to a real photon environment. Author

Subject Categories:

  • Nuclear Radiation Shielding, Protection and Safety

Distribution Statement:

APPROVED FOR PUBLIC RELEASE