Packaging Effects on Semiconductor Device Radiation Response.
Final phase rept. Jul 74-Apr 75,
INTELCOM RAD TECH SAN DIEGO CALIF
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This report examines the effect of FXR-stimulated, re-emitted radiation from the packages of three planar-epitaxial transistors and two high-level NAND gate integrated circuits on the photocurrent response of the devices. Experimental measurements were made on the five devices in both low- and high-engery photon FXR environments. The experimental results are compared with a radiation transport analysis including use of the SANDYL code of the device package, materials, and proton energy spectrum. This work adds further verification to a procedure for extending simulation test data to a real photon environment. Author
- Nuclear Radiation Shielding, Protection and Safety