New Passivation Methods for GaAs.
Final technical rept. 1 Jan-31 Dec 75,
NEWCASTLE-UPON-TYNE UNIV (ENGLAND) DEPT OF ELECTRICAL AND ELECTRONIC ENGINEERING
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The fabrication of high-quality oxides on GaAs with good electrical interface properties was investigated. The physical properties of our new anodix anodic oxidation were investigated by a systematic study of relevant parameters. The new electrolyte, termed AGW anodization by glycol and water was applied to InP with some useful success. Attempts were made to incorporate other elements in the oxide in view of better high temperature stability. The results demonstrate some interesting effects regarding the drift of ions across oxides. Higher temperature annealing was found possible when using N2 or Ar as ambient gas. Two approaches of fabricating MOSFETs have resulted in preliminary transistor characteristics. Author
- Solid State Physics