Radiation Effects in MOS Gate Insulators.
Final rept. 3 Apr 74-28 Feb 75,
LEHIGH UNIV BETHLEHEM PA
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Metal-alumina-silicon structures were made by a CVD process. Comparison with reported data on MAS devices prepared in industrial laboratories indicate that the latter samples consistently exhibit significantly lower initial charge, higher charge injection thresholds, and lower injected charge densities. Photodepopulation measurements of electrons injected under high positive bias indicated that some of the electron traps were associated with residual water generated in the CVD process and therefore might be minimized by some post-deposition process. The effect of Gamma-irradiation up to 10 to the 7th power rads under floating gate conditions of thin MOS structures with aluminum or chromium metallization was determined by changes in the fixed charge or interface state density. Chemical micro-analyses and C-V measurements were combined to determine the role of sodium and of aluminum in the mobile charges observed in MOS gate insulators by 300C bias stress treatments, before and after exposure to 10 to the 6th power rads of ionizing radiation from a 60Co source.
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products